Atmel 抗辐射专用集成电路 ATMX150RHA
tmel最新的混合信号ATMX150RHA平台面向航空应用简化了设计流程，并可以提供高达2200万可路由栅，包含非易失内存区块、由编译SRAM和DPRAM区块组成的灵活外形，并支持搭载已认证模拟IP的2.5/3.3/5V和高压（25-45-65V）输入/输出能力。这一高度集成且灵活的ASIC平台能够降低航天应用的整体物料成本。包括Synopsys、Mento和Cadence等领先第三方和专利设计工具的商现均为ATMX150RHA ASIC平台提供了支持。秉承Atmel近30年在航天航空领域积累的丰富技术经验，最新的ATMX150RHA平台整合了Atmel久经考验的抗辐射解决方案，同时为客户提供了完善的服务选项以支持其设计出适用于通过认证的飞行模型的ASIC。
ATMX150RHA is a mixed-signal ASIC offe poviding high-pefomance and high-density solutions fo space applications. This offe coves ASIC solutions up to 22 million outable gates. With a set of pe-qualified analog IP&squo;s, such as DACs, DACs, PLL, egulatos, ATMX150RHA will ease the design of mixed-signal ASIC&squo;s.
ATMX150RHA is manufactued on a 150nm, five-metal-layes SOI CMOS pocess intended fo use with a supply voltage of 1.8V fo coe and 2.5/3.3/5V fo peiphey. This ASIC platfom is suppoted by a combination of state-of-at thid-paty and popietay design tools fom: Synopsys, Mento and Cadence. The tools fom these supplies collectively fom the efeence tool flows fo both the font and back end.
ATMX150RHA ASIC&squo;s will be available in seveal quality assuance gades, such as Mil-Pf 38535 QML-Q and QML-V and ESCC 9000.
关键特性
- Compehensive Libay of Standad Logic and I/O Cells
- Up to 22 usable Mgates equivalent NAND2
- Opeating voltage 1.8+/-0.15V fo the coe and 5V +/-0.5V, 3.3+/-0.3V, 2.5+/-0.25V fo the peiphey
- High Voltage I/O&squo;s 25-45-65V
- Memoy Cells Compiled (ROM, SRAM, DPRAM, Registe file memoy cells) o synthesized to the Requiements of the Design
- 32KB NVM memoy block
- Cold Spaing Buffes
- High Speed LVDS Buffes 655Mbps
- PCI Buffes
- Set of analog IPs
- Low cost NRE with a Space Multi Poject Wafe (SMPW) option
- No single event latch-up below a LET theshold of 75 MeV/mg/cm² at 125°C
- SEU hadened flip-flops
- TID test up to 300kRads (Si) fo 1.8V and 3.3V devices and 150kRads (Si) fo 5V and HV I/OS accoding to Mil-Std 883 TM1019
- CCGA, CLGA and CQFP qualified Packages Catalog
- ESD bette than 2000V
