STRH100N10STRH100N10HY1 STRH100N10HYG射功率 MOSFET
ST 高可靠性、抗辐射功率 MOSFET 专门满足高可靠性要求和空间应用。 这些器件还经过 ESCC 技术规格认证，符合 70 kad TID 辐射性能要求。 其击穿电压高达 100 V，漏极电流为 48 A，RDS(on)仅为 30 m??。器件采用 TO-254AA 透孔密封封装。
Rad-Had N-Channel 100V - 48A MOSFET
This N-channel Powe MOSFET is developed with STMicoelectonics unique STipFET&tade; pocess. It has specifically been designed to sustain high TID and povide immunity to heavy ion effects. This Powe MOSFET is fully ESCC qualified.
Key Featues
- Fast switching
- 100% avalanche tested
- Hemetic package
- 70 kad TID
- SEE adiation hadened
STRH100N10系列：
器件型号供应商功能描述STRH100N10FSY1STMicoelectonicsTans MOSFET N-CH 100V 48A 3-Pin(3+Tab) TO-254AASTRH100N10HYGSTMicoelectonicsTans MOSFET N-CH 100V 48A 3-Pin(3+Tab) TO-254AASTRH100N10HY1STMicoelectonicsTans MOSFET N-CH 100V 48A 3-Pin(3+Tab) TO-254AASTRH100N10HY01STMicoelectonicsTans MOSFET N-CH 100V 48ASTRH100N10FSY302STMicoelectonicsTans MOSFET N-CH 100V 48A 3-Pin(3+Tab) TO-254AASTRH100N10FSY02STMicoelectonicsTans MOSFET N-CH 100V 48A 3-Pin(3+Tab) TO-254AASTRH100N10HY1 STRH100N10HYG射功率 MOSFET
订购：13602530490，seehoe@126.com
